For the first time, a team at HZB has identified the atomic substructure of amorphous silicon with a resolution of 0.8 nanometres using X-ray and neutron scattering at BESSY II and BER II. Such a-Si:H thin films have been used for decades in solar cells, TFT displays, and detectors. The results show that three different phases form within the amorphous matrix, which dramatically influences the quality and lifetime of the semiconductor layer.
For the first time, a team at HZB has identified the atomic substructure of amorphous silicon with a resolution of 0.8 nanometres using X-ray and neutron scattering at BESSY II and BER II. Such a-Si:H thin films have been used for decades in solar cells, TFT displays, and detectors. The results show that three different phases form within the amorphous matrix, which dramatically influences the quality and lifetime of the semiconductor layer.
Share this Article
Recommended